Etching

  • Anatech SP-100 Plasma System

    ANATECH SP 100 is a quartz barrel plasma system, which uses oxygen as a plasma gas while the plasma is generated using a RF generator (100 Watt RF 13.56 MHz). It has a chamber size 4” in diameter and 8” long. It is used for removing organic contaminants and traces of photoresist residue of developed/patterned substrates.

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  • Electroplating/Lift Off Bench: Bay 3

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  • Oxford Plasma Lab System

    The Oxford system is a load-locked inductively coupled plasma etch tool that uses RF (600 watts 13.56MHz) for the RIE water-cooled electrode and 1.2 kW, 2 MHZ on the ICP driven electrode. The system currently uses Chlorine and Boron tri-chloride gases. The system is PC controlled and also has helium backside cooling for substrate temperature control down to -5C. The system is compatible with wafers up to 150 mm substrates. Typical process pressure is 1-100 mtorr while the plasma density is plasma density: ca 5 x 1011 / cm3. It also has an effective electrostatic shielding to avoid the capacitive coupling component.

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  • Photo bay

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  • Pre-diffusion Clean Bench: Bay 1

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  • Unaxis PlasmaTherm 790

    The Uniaxis Inductively coupled Plasma 790 system is used to etch various materials, such as silicon dioxide, silicon nitride, and various polymers from the surface of a substrate using several reactive gases in a RF induced plasma. This single wafer system consists of a top coil and a bottom electrode for application of RF fields while the bottom plate can helium cooled. The system can accepted wafer sizes up to 6 inches. A 2 MHz RF at 1000 watt max can be applied to the top coil while the bottom electrode is supplied with 13.56 MHz RF at 500 Watts max. The process often has high selectivity to the etched material and anisotropic etching can be achieved. Oxygen, Argon, Sulfur hexafluoride and Trifluoromethane are used as etching gases. A mass flow controller sets the flow rate for each gas and the pressure is controlled separately by a butterfly valve between the chamber and the pump, so pressure as small as 2mT can be achieved in the chamber for higher etch rate.

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  • Veeco Microtech Ion Mill

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  • Wet Etch Bench: Bay 2

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  • XACTIX e1

    XACTIC e1 tool uses XeF2 gas to isotropically dry etch silicon, germanium, and molybdenum for creating/releasing MEMS devices. XeF2 shows high selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes. It can process pieces up to 4" wafers and generates relatively rough isotropically etched features.

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Fab Notices

  • Oxford Plasma Lab System

    The Oxford Plasma Lab system will be down for parts replacement purposes. Updates as to when the equipment will be back online will be posted shortly.

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  • Thermal Evaporator

    The Thermal Evaporator will be down approximately until December 11th, 2017 for repair of the cryopump. Further updates will be posted on the website.

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Upcoming Events

Kostas Center News

  • Publications

    1. Congratulations to the members of the Advanced Manufacturing, Energy Storage, and Multifunctional Materials group for publishing "Stable and Aligne

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Contact Kostas Center

448 Egan Center, 360 Huntington Ave., Boston, Massachusetts 02115 Phone: 617-373-5848
Email: s.somu@neu.edu