-Thin-film stress measurement instrument that measures the changes in the radius of curvature of a wafer caused by the deposition of a stressed thin film.
- Laser scanning to measure stress on all reflecting films.
- Measures and displays stress as a function of time or temperature.
- Comprehensive data analysis capabilities that include trend plotting for statistical process control (SPC) and displaying a 3-D map of wafer deflection over the entire surface.
- Used for calculation of biaxial modulus of elasticity and linear expansion,water diffusion coefficient in dielectric films, linear regression and stress-tempor stress-time gradients.
- Provides analysis of thin film stress with very low measurement noise and allows observation and quantitative evaluation of stress relaxation,oxide densification, thin film phase transformations and annealing.

Additional Resources


Training Contact: Sivasubramanian Somu
Service Contact: Scott McNamara