The Oxford system is a load-locked inductively coupled plasma etch tool that uses RF (600 watts 13.56MHz) for the RIE water-cooled electrode and 1.2 kW, 2 MHZ on the ICP driven electrode. The system currently uses Chlorine and Boron tri-chloride gases. The system is PC controlled and also has helium backside cooling for substrate temperature control down to -5C. The system is compatible with wafers up to 150 mm substrates. Typical process pressure is 1-100 mtorr while the plasma density is plasma density: ca 5 x 1011 / cm3. It also has an effective electrostatic shielding to avoid the capacitive coupling component.